发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF |
摘要 |
PURPOSE: To extremely increase a pulse-shaped thermal load capacity further than in a conventional art, or to extremely decrease temperature further than in a conventional art in the case of the equivalent thermal load in a semiconductor device equipped with a semiconductor substrate whose lower surface is attached to a metallic substrate. CONSTITUTION: An auxiliary body 12 made of materials with large thermal conductivity working as a thermal buffer is attached to an upper face 11 of a semiconductor substrate 1, and a coupled layer 14 for guaranteeing extremely small heat transfer resistance is provided between the upper surface 11 of the semiconductor substrate 1 and the lower surface of the auxiliary body 12. |
申请公布号 |
JPH05190759(A) |
申请公布日期 |
1993.07.30 |
申请号 |
JP19920188652 |
申请日期 |
1992.06.22 |
申请人 |
SIEMENS AG |
发明人 |
RAINHORUTO KUUNERUTO;PEETAA CHIYURUKESU |
分类号 |
H01L23/58;H01L23/36;H01L23/373 |
主分类号 |
H01L23/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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