发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PURPOSE: To extremely increase a pulse-shaped thermal load capacity further than in a conventional art, or to extremely decrease temperature further than in a conventional art in the case of the equivalent thermal load in a semiconductor device equipped with a semiconductor substrate whose lower surface is attached to a metallic substrate. CONSTITUTION: An auxiliary body 12 made of materials with large thermal conductivity working as a thermal buffer is attached to an upper face 11 of a semiconductor substrate 1, and a coupled layer 14 for guaranteeing extremely small heat transfer resistance is provided between the upper surface 11 of the semiconductor substrate 1 and the lower surface of the auxiliary body 12.
申请公布号 JPH05190759(A) 申请公布日期 1993.07.30
申请号 JP19920188652 申请日期 1992.06.22
申请人 SIEMENS AG 发明人 RAINHORUTO KUUNERUTO;PEETAA CHIYURUKESU
分类号 H01L23/58;H01L23/36;H01L23/373 主分类号 H01L23/58
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