| 摘要 |
PURPOSE:To provide a semiconductor light-emitting element and a semiconductor laser, which are improved in such a way that a selection of the optimum change- over timing of a group V element raw material at the time of formation of a III-V compound semiconductor heterostructure is made wide and the optimum of the raw material can be facilitated. CONSTITUTION:A semiconductor light-emitting element is constituted into such a structure that a buffer layer 3 consisting of a ternary or quaternary III-V compound semiconductor having the group V element as that being contained in a III-V compound semiconductor constituting a III-V compound semiconductor substrate 1 is formed between the substrate 1 and a clad layer 4 and a semiconductor laser is constituted into such a structure that a buffer layer 13 consisting of a ternary or quaternary III-V compound semiconductor having the same group V element as that being contained in a III-V compound semiconductor constituting a III-V compound semiconductor substrate 11 is formed between the substrate 11 and a lower clad layer 14. |
