发明名称 MANUFACTURE OF SEMICONDUCTOR LAYER
摘要 PURPOSE:To grow a semiconductor crystalline layer having a large area and to sufficiently enhance a strength of the layer in an apparatus for manufacturing a semiconductor layer for growing a semiconductor crystal to be used for an optical semiconductor device, a high speed semiconductor device, etc. CONSTITUTION:The apparatus for manufacturing a semiconductor layer comprises a growing boat base 1 having a recess 2 in which a substrate 8 formed with a seed is charged, and a growing boat 3 having a growing solution reservoir 4 formed with a linear opening 6 in a bottom and sliding on the base 1.
申请公布号 JPH05190476(A) 申请公布日期 1993.07.30
申请号 JP19920002439 申请日期 1992.01.09
申请人 FUJITSU LTD 发明人 KATO KIYOKO
分类号 H01L21/208;H01L33/30;H01L33/34 主分类号 H01L21/208
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