| 摘要 |
<p>PURPOSE:To improve a damp-proof property of a semiconductor device with the multilayer metal wiring structure having a supplementary power supply pad not bonded at the time of assembly. CONSTITUTION:A supplementary power supply pad 1 and an inner region wiring 2 are formed on the uppermost metal wiring layer 3 while the supplementary power supply pad 1 and the inner region wiring 2 are connected at the connection part 4 through via holes 5 by way of a lower layer metal wiring layer 6. Thereby, even the supplementary power supply pad 1 is corroded by invasion of moisture from the outside and corrosion progresses toward the inner region wiring 2, progress of corrosion is sharply suppressed at the via hole part 5 and the inner region wiring 2 becomes hard to cause disconnection while sharply improving a damp-proof property.</p> |
