| 摘要 |
PURPOSE: To provide satisfactory yield and reliability in a manufacturing processing, and to obtain further satisfactory device characteristics by applying a processing process in a different sequence using a gate as a photomask. CONSTITUTION: The materials of a semiconductor thin film 2 are accumulated on a substrate 1, and insulating gate structures 3 and 4 are formed on the upper face. Then, a conductive layer 5 is accumulated on the insulating gate structures 3 and 4 and the semiconductor thin film 2 at the insulating gate side. Then, a negative resist 6 is adhered to the conductive layer 5, and the photoresist 6 is exposed by an irradiation light 25 transmitted through the substrate 1 while the insulating gate 4 is used as a photomask. Then, the conductive layer 5 is removed from the insulating gate 4, and individual parts 51 and 52 of the conductive layer 5 on the semiconductor thin film 2 at the opposite side of the insulating gates 3 and 4 of the semiconductor thin film 2 are allowed to remain so that a source and a drain can be formed. Thus, a high speed insulating gate thin film transistor can be manufactured.
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