| 摘要 |
PURPOSE:To make the etching speed uniform in the center part and the circumferential part of the material to be treated. CONSTITUTION:When the material to be treated 26 is etched by reactive gas plasma, at least a kind of gas, among a plurality of reaction product gases grown by etching reaction, is introduced as reaction suppressing gas into the high etching speed region of the material to be treated 26 by the second introducing pipe 32. Accordingly, the etching speed of the region having high etching speed can be suppressed, and the etching speed of each part of the material to be treated can be made uniform.
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