| 摘要 |
PURPOSE:To provide an electron detector which can observe a sample while primary electrons are being applied to the sample with a low energy which does not damage the sample. CONSTITUTION:Electrons are detected by an amorphous silicon laminated type solid-state image-sensing element which is formed on a semiconductor substrate 26 and which has an electric charge transfer element 19 for transferring electric charge, a highly resistant intrinsic type amorphous silicon layer 14 formed on an upper part of the electric charge transfer element 19, a transparent conductive film 12 formed on an upper face of the intrinsic type amorphous silicon layer 14 and a pixel electrode 15 which is formed on a lower surface of the intrinsic type amorphous silicon layer 14, depletes the intrinsic type amorphous silicon layer 14 and is applied with positive voltage with respect to the transparent conductive film 12.
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