| 摘要 |
PURPOSE:To suppress the hot electron effect and surface breakdown by a method wherein field concentration is moderated at electrode ends thanks to grooves created in the surface of a semiconductor surface diffusion layer of an insulated gate type field effect transistor and then electrode material is attached to the treated surface. CONSTITUTION:On a P type Si substrate 1, a gate oxide film 2 and polycrystalline Si layer 3 are subjected to patterning, for the formation by ion implantation of an N<-> type diffusion layer 4 constituting a portion of a source and drain. The diffusion region 4 is subjected to etching whereby its ends are provided with grooves, whereafter a W films 6 to be developed into electrodes are selectively deposited on the surface by CVD. This structure, similar to the graded-junction structure, moderates the electric field in the neighborhood of the drain and suppress the hot-electron effect. |
