MANUFACTURE OF SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

PURPOSE:To provide a method for manufacturing a light-emitting device which uses a semiconductor nitride by the dry etching method. CONSTITUTION:A light-emitting layer which consists of an n-type layer and an i-type layer or a p-type layer semiconductor nitride is formed with a film thickness of 3mum or less within vacuum and a lithography process is performed by the dry etching method for manufacturing a light-emitting device. When the dry etching method is used for the lithography process, improved diode characteristics are realized if the film thickness is 1mum or less, thus enabling a semiconductor light-emitting device which emits a blue light to be manufactured.