| 摘要 |
The present invention relates to a pressure sensor, of the type comprising: a substrate (110) made of an electrically insulating material, a wafer (130) of semiconductor material forming a piezosensitive gauging structure, carried by the substrate (110), a mass of gel (170) covering the wafer (130) and a fluorocarbon-based film (190) deposited on the mass of gel (170), characterised in that the fluorocarbon-based film (190) is a flexible film deposited floating on the mass of gel (170) in order to transmit without stress thereto and to the wafer (130) the pressure variations of the surrounding medium. <IMAGE>
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