| 摘要 |
PURPOSE:To improve the selectivity to resist or wiring and provide a growth apparatus of a silicon oxide film capable of controlling the occurrence of particles in the growth apparatus of the selective oxide film by a liquid phase growth method. CONSTITUTION:The present apparatus includes a discrete type treating bath 1 for forming a film by a face down method. The inside of the treating bath 1 and a water pipe 13 is treated with a Teflon, and the occurrence of particles is reduced. Then, a treatment for forming the film is performed for a certain time, and an adhesion of the particles is prevented. Further, the apparatus provides a wafer transfer robot 15 for automatically performing a wafer transfer between the treating bath 1 and a spin etch part 16. Therefore, the occurrence of particles is reduced and the life of treating liquid can be prolonged about 2 times. Further, a silicon oxide film adhering or growing on a photoresist pattern or a metal wiring pattern can substantially be removed. |
