| 摘要 |
<p>PURPOSE:To provide a display device being high in the mobility of a carrier in the channel layer of a driver circuit for driving and little in the variation of TFT characteristics of a display part. CONSTITUTION:The channel layer 2c of the thin-film transistor of a display part is smaller in crystal grain size than the channel layers 2a, 2b of the thin- film transistor to be used for a driver circuit for driving. Because the channel layers 2a, 2b are polycrystalline silicon layers obtained by the heat treatment of amorphous silicon at a low temperature and for a long period of time, they are larger in crystal grain size than the channel layer 2c obtained by the deposition of polycrystalline silicon. Because the crystal grain size of the channel layers of the thin-film transistor to be used for the driver circuit for driving is large, the mobility of a carrier becomes higher so that a highspeed display is made possible. Also, because the crystal grain size of the channel layer of the transistor of the display part is small as compared with the size of the channel layer, a satisfactory picture quality can be obtained without any variation in transistor characteristics.</p> |
