| 摘要 |
PURPOSE: To provide a method for producing a dope area in an integrated circuit board so as to satisfactorily control the distribution of dopant even when the penetration depth of dopant is a little and its gradient is sharp. CONSTITUTION: An intermediate layer 12 is prepared on a substrate 11 composed of a semiconductor material, a doped glass layer 13 is prepared on the intermediate layer 12, a dope area 14 is formed during a heating process by diffusing the dopant from the doped glass layer 13 through the intermediate layer 12 into the substrate 11, and the intermediate layer 12 is formed from a material to be functioned as a diffusion barrier for the dopant so that the intermediate layer can limit the concentration of dopant in the dope area 14.
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