| 摘要 |
PURPOSE:To realize a memory cell wherein it is composed of one element and its constitution is simple by selecting a proper material in a semiconductor storage device. CONSTITUTION:A substrate electrode 4, on the side of a polyacetylene substrate, which is composed of Au, the substrate 1, an insulating film 2 which is composed of SiO2 and an n-type Si substrate 3 are laminated in this order. A capacitor having two terminals is constituted. A high voltage is applied to it to produce a state that a capacity value is large. Alternatively, a low voltage is applied to it to produce a state that the capacity value is small. Thereby, a write operation is performed. The high voltage or the low voltage is compared with an absolute voltage, and a small voltage is applied. In this case, the magnitude of a charging current which flows due to the magnitude of the capacity value is detected. Thereby, a readout operation is performed. |
