| 摘要 |
PURPOSE:To reduce fluctuation of thickness of a diaphragm and then easily reduce the size of a semiconductor pressure sensor with less fluctuation of pressure characteristics where a pressure-sensitive resistance is formed on one substrate which is obtained by laminating two semiconductor substrates. CONSTITUTION:Two semiconductor substrates 11 and 13 are laminated by an oxide film 12, an isolation 16a and buried leads 14b and 16b are formed at the side of one substrate 11, a diaphragm 19 is formed at the side of one substrate 13 so that the oxide film 12 is exposed, and a pressure-sensitive resistor 20 is buried to the side of one substrate 11 of the bottom surface of the diaphragm 19 for forming the title item connection to the buried lead 14b. |
