| 摘要 |
<p>PURPOSE:To improve controllability and facilitate the manufacture by forming an emitter and a collector out of silicon single crystals, by the use of an SOI substrate as a substrate, and forming each electrode, using self-alignment technology. CONSTITUTION:An emitter 4 and a collector 3 are made a specified interval apart on the same plane of a substrate, and lower and upper gates 1 and 6 are made between the emitter 4 and the collector 3. In this case, the emitter 4 and the collector 3 are made of silicon single crystals, using an SOI substrate as a substrate, and the top of the emitter 4 is pointed in the direction of thickness. And, using the SOI substrate, it becomes possible to apply the fine processing technology of silicon, and further the pointing of the top by thermal oxidation becomes easy by making the emitter 4 single crystals. That is, the controllability improves and the manufacture can be facilitated by forming the emitter 4 and the collector 3 out of silicon single crystals and forming each electrode, using self-alignment technology.</p> |
