| 摘要 |
PURPOSE: To provide a wiring device for a semiconductor device so as not to generate any Si on the following stage of heat treatment without letting Al spiking occur. CONSTITUTION: The semiconductor device is provided with a semiconductor Vafer 31, insulating film 32 having an opening part, and 1st conductive layer 37 formed on the insulating film 32 so as to completely fill up the opening part. At the time of heat-treatment process for filling up the opening part, the 1st conductive layer 37 generates no residual Si. The semiconductor device can be further provided with a 2nd conductive layer having a flat surface on the 1st conductive layer 37. This improves a following photolithography process. On the 2nd conductive layer, a reflection proofing film is formed at the time of photolithography process. It is preferable that the semiconductor device is provided with diffusion barrier layers at the lower part of 1st conductive layer 37, the semiconductor wafer 31, insulating film 32 and on the inner surface of opening part in order to prevent the reaction between the 1st conductive layer 37 and the semiconductor wafer 31 or the insulating film 32. |
