| 摘要 |
PURPOSE:To provide the structure of a quantum small-gage wire type field-effect transistor with a low source resistance and the manufacture of the transistor. CONSTITUTION:In a field-effect transistor having a structure where an active layer has a shape like a small-gage wire, a gate electrode 3 has a sectional structure, where upper dimensions are larger than lower dimensions, and the transistor has an ohmic electrode 4 formed in self-aligning manner with this gate electrode 3. In this field-effect transistor, a channel is formed into a shape like a small-gage wire, a gate electrode 3 having a sectional structure, where the upper dimensions are larger than the lower dimensions, is formed in the direction perpendicularly intersecting to the small-gage wire, and an ohmic metal is formed by vapor deposition in self-aligning manner with the gate electrode and further formed into an ohmic electrode 4 through alloy process. |
