| 摘要 |
<p>PURPOSE:To eliminate a step at a part where signal lines cross and then obtain an improved position-detection element with a large light-reception area by laminating a transparent electrode layer and a semiconductor layer on a transparent substrate, laminating a plurality of signal lines in grid shape in vertical and horizontal directions, and then connecting the signal lines in vertical and horizontal directions to a semiconductor layer at a specific position. CONSTITUTION:A transparent electrode layer 2 is laminated uniformly on the upper surface of a substrate 1 which is detected by a light-transmission material and further an amorphous silicon semiconductor layer 3 is laminated on the upper surface. Then, a plurality of signal lines X1-Xn are formed in parallel at a specified spacing on the upper surface of the impurity layer 3. Furthermore, the semiconductor layer 3 and the upper surface of the signal lines X1-Xn are coated with an insulation film 4 such as silicon oxide film and at the same time a plurality of holes 5 for contact are formed at a specified position of the insulation film 4. Then, a plurality of signal lines Y1-Yn which cross the signal lines X1-Xn are formed in parallel at a specified spacing and are connected to the semiconductor layer 3 through a hole 5 for contact of the insulation layer 4. Also, they are connected to the transparent electrode 2 through the semiconductor layer 3.</p> |
