| 摘要 |
PURPOSE: To surely use a device even at a high voltage by providing a means for increasing breakdown voltage between an island-shaped area and an adjacent semiconductor separate area in a semiconductor device. CONSTITUTION: A breakdown voltage increasing means is provided not only to a horizontal extended part 40 of a separate area 4 but also to a p-type area 41 being a means adjacent to the surface. The p-type area 41 is arranged in an island-shaped area 3, and these p-type areas form a narrow ring completely surrounding a contact pad 6 in the island-shape area 3. An isolated distanceλbetween the p-type areas 41 and between the p-type area 41 and the extended part 40 is set about 6μm sufficiently short enough to allow depletion areas in the surrounding of the surfaces area 41 and a p-n junction 34 to overlap each other in an operation. Thus, the depletion area in the surrounding of the p-n junction 34 is further extended on the surface so that electric field intensity in the depletion area can be further dropped. Thus, the breakdown voltage of the p-n junction 34 can be further increased. Thus, the p-n junction of the device can withstand voltage higher than 1400V.
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