发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF, DISPLAY DEVICE HAVING ABOVE DESCRIBED SEMICONDUCTOR DEVICE AND SUPPORTING PLATE THEREOF |
摘要 |
<p>PURPOSE: To decrease the leak currents of a semiconductor device which is a semiconductor device used particularly for a matrix display device, such as LCD, and has Schottky diodes formed between the metallic layers on an insulating substrate and semiconductor layers extending on these metallic layers beyond their flanks. CONSTITUTION: The flanks 21 of the Schottky metallic layers 5, 6 are provided with insulators 10. The insulators suppress the leak currents generated from the flanks of the Schottky metallic layers. These insulators are preferably composed of the oxide of the Schottky metals. The oxide is easily formable by local oxidation using, for example, oxygen plasma.</p> |
申请公布号 |
JPH05188402(A) |
申请公布日期 |
1993.07.30 |
申请号 |
JP19920175572 |
申请日期 |
1992.07.02 |
申请人 |
PHILIPS GLOEILAMPENFAB:NV |
发明人 |
ANTONII YAKOBU BOSUMAN;TEUNISU YOHANESU FUINKU;RICHIYAADO KURISUTOTSUFUERU FUAN DEIKU;FUREDERIKASU RUROFU YOHANESU FUISUMAN |
分类号 |
G02F1/136;G02F1/1365;H01L27/08;H01L27/12;H01L29/47;H01L29/872 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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