| 摘要 |
<p>PURPOSE:To simplify the manufacturing processes of a semiconductor device and to prevent films such as a channel protection film and the like from being abraded by a method wherein a conductive film and a semiconductor layer are selectively etched, then a first and a second masking film are removed, the conductive film is removed by lift-off, and a source electrode and a drain electrode are formed on both the sides of the channel protection film. CONSTITUTION:A first masking film 27 is formed on an insulating film 26 in a region of a semiconductor layer 25 where a channel region layer is to be formed, and the insulating film 26 is patterned to form a channel protection film 26a. Thereafter, a conductor film 28 and a second masking film 29a are successively formed, and then the second masking film 29a and the conductor film 28 located above the first masking film 27 are selectively removed. Then, the first and the second masking film, 27 and 29a, are removed, the conductor film 28 is also removed by lift-off, and then a source electrode 28a and a drain electrode 28b are formed. By this setup, a manufacturing process can be more simplified, and films such as a channel protection film and the like can prevented from being abraded.</p> |
