| 摘要 |
PURPOSE:To enhance the dimensional accuracy of a resist after its developing operation by a method wherein a semiconductor wafer is irradiated with a plurality of beams of detection light whose wavelength are different, beams of reflected detection light are converted into detection signals via different optical systems, only an optimum detection signal is selected, operated and processed and the optimum developing time is computed. CONSTITUTION:A semiconductor wafer 6 is irradiated, via an optical system A1, with a beam of detection light which has passed a filter F1; the beam of detection light is reflected from the semiconductor wafer 6, a resist 7 and the surface of a developing solution 8; the beam of deflection light is photodetected by a photomultiplier detection part B1. In the same manner, a beam of detection light which has passed a filter Fn is photodetected by a photomultiplier detection part Bn. Detection signals from photomultiplier detection parts B1, B2,...Bn are monitored by a detection-signal monitoring part 2; an optimum detection signal selected by a selector 3 by a monitored result is operated and processed, and the optimum developing time is computed. Thereby, a development end point can be detected with high accuracy, and the dimensional accuracy of the resist after its developing operation can be enhanced. |
