| 摘要 |
PURPOSE:To ensure the capacity of at least 30fF of a capacitor by a method wherein the film thickness of a silicon nitride film which is arranged at the upper part and the lower part of a ferroelectric film is set to at most 30Angstrom . CONSTITUTION:The circumference of, e.g. lead zirconate titanate 305 as a ferroelectric film is surrounded by a silicon nitride film 304 as a diffusion- preventing film. Thereby, the stoichiometric composition of the lead zirconate titanate 305 is ensured, and it is possible to prevent the characteristic of the lead zirconate titanate 305 from being deteriorated during the production process of the title device and in the operation of the title device. In this case, the film thickness of the silicon nitride film 304 is set to at most 30Angstrom . Thereby, when the title device acts as a DRAM, it is possible to ensure the capacity of at least 30fF of a capacitor. |
