| 摘要 |
PURPOSE:To obtain a two-port semiconductor memory, which suppresses the noises caused by the coupling capacitance of word lines and suppresses the potential fluctuation of a power supply line, by forming one set of transfer MISFETs in a P form, and forming the other set of transfer MISFETs in a N form. CONSTITUTION:A flip-flop FF and a pair of differential input/output terminals CN1 and CN2 thereof are constituted of a pair of bit lines and two sets of transfer MISFETs QR1, QR2, QW1 and QW2 for connecting the gates to word lines. One set of the transfer MISFETs QR1 and QR2, which use a reading word line RWL for a gate input, are made to be an N form. One set of the transfer MISFETs QW1 and QW2, which use a writing word line WWL for gate input, are made to be a P form. Thus, a non-selective word line for writing becomes a High level, and that for reading becomes a Low level. The noises caused by the coupling capacitance between the word lines when the selected word lines undergo transition are less, and potential fluctuation can be suppressed. |
