摘要 |
PURPOSE:To reduce a coupling noise generated between first and seccond bit lines comprising a pair adjacently and the fluctuation of potential of a cell plate and a substrate plate and to manage a sense amplifier without especially making into high sensitivity. CONSTITUTION:Transfer control signals TG00, TG01, TG10, and TG11 which turn on and off first to fourth transfer circuits T00, T01, T11, and T10 are set so as to be changed at respective timing. When data is read out from a selected memory cell(for example. M00) to a bit line(B00) by those transfer control signals, the bit line (B00) and a bit line (B11) located at a diagonal position are connected to the sense amplifier SA. A pair of neighboring bit lines (B00 and B11) are connected to the sense amplifier SA when a signal amplified by the sense amplifier SA is returned to the memory cell (M00). |