| 摘要 |
<p>PURPOSE:To increase the storage capacity of the title semiconductor device by a method wherein respective electrode terminals for at least two LSI chips which have been bonded to both faces of a mounting film are connected to wiring patterns on the mounting film. CONSTITUTION:A wiring layer 32 is formed on a wiring film 30 to which bumps 11, 21 for connection use on a first Si chip and a second Si chip 10, 20 are connected via connection wiring parts 31a, 31b. The bumps 11 for connection use on the first Si chip and the bumps 21 for connection use on the second Si chip are connected to the wiring layer 32 according to a prescribed wiring pattern. The bumps 11 for connection use are connected to bonding pads 35 on the wiring film 30. The bumps 21 for connection use on the second Si chip 20 and the bonding pads 35 on the wiring film 30 are connected electrically in a desired relationship. Thereby, one semiconductor device which is provided with the two Si chips 10, 20 can be constituted, and the storage capacity of the semiconductor device can be increased.</p> |
