| 摘要 |
PURPOSE:To enhance the alignment accuracy of patterns without increasing the occupied area of a mark region for alignment use and without dropping a throughput regarding the alignment method of the patterns in a lithographic process. CONSTITUTION:A plurality of layers of patterns including an A-layer, a B-layer and a C-layer in this order are overlapped and formed on a substrate. At this time, A-layer marks 2 are formed inside a mark region 1C when the A-layer is patterned, an alignment operation is performed by referring to the A-layer marks 2 when the B-layer is patterned, B-layer marks 3 are formed in parallel with the A-layer marks 2 inside the same mark region 1C as the A-layer marks 2, and an alignment operation is performed by referring to both the A-layer marks 2 and the B-layer marks 3 when the C-layer is patterned. |
