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发明名称
(C2) ;稟tzverfahren f穟r die Herstellung einer Halbleitervorrichtung
摘要
申请公布号
DE4300983(A1)
申请公布日期
1993.07.29
申请号
DE19934300983
申请日期
1993.01.15
申请人
MICRON TECHNOLOGY, INC., BOISE, ID., US
发明人
CATHEY, DAVID A., BOISE, ID., US;ROLFSON, J. BRETT, BOISE, ID., US
分类号
H01L21/30;H01L21/02;H01L21/027;H01L21/302;H01L21/3065;H01L21/308;H01L21/311;H01L21/3213;H01L21/822;H01L21/8242;H01L27/04;H01L27/10;H01L27/108
主分类号
H01L21/30
代理机构
代理人
主权项
地址
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