发明名称 PRODUCTION OF THIN-FILM TRANSISTOR MATRIX
摘要 <p>PURPOSE:To eliminate patterning defects by previously removing the unnecessary resist film in the peripheral part of a glass substrate. CONSTITUTION:The resist film 10 is formed and is subjected to overexposing in the peripheral part 14 shown by a hatched part where fine patterns do not exist. The overexposed resist is sufficiently solubilized in a developing soln. and is, therefore, completely dissolved away at the time of development. The floating of the modified matter of the resist in the developing soln. does not, therefore, arise and the remaining of redeposits, etc., on the surface of the resist film 10 is obviated. The patterning defects occurring in the presence of the unnecessary resist film in the parts exclusive of the display part are eliminated in this way.</p>
申请公布号 JPH02217825(A) 申请公布日期 1990.08.30
申请号 JP19890039140 申请日期 1989.02.17
申请人 FUJITSU LTD 发明人 TAKIZAWA HIDEAKI;ICHIMURA TERUHIKO;INOUE ATSUSHI;NAGAHIRO NORIO;KAWAI SATORU
分类号 G02F1/13;G02F1/136;G02F1/1368;G09F9/30;H01L21/336;H01L29/78;H01L29/786 主分类号 G02F1/13
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