Cryogenic opt. partial metallisation process - involves UV irradiation of chemical cpd. layer on cold substrate

摘要

In metal layer prodn. from a chemical cpd. (2) on (part of) a substrate (1) by UV irradiation, the substrate is cooled to the cryogenic temp. region during certain process steps. Pref. the substrate (1) is cooled to at least -198 deg.C with liq. N2 during vapour deposition of the chemical cpd. (2) on the substrate surface (15) and during UV irradiation. USE/ADVANTAGE - The process is used to produce conductor structures or metallic layers on substrates. Homogeneous metallic layers are deposited in sharply defined regions of the substrate surface.