| 摘要 |
PURPOSE:To obviate asymmetrical cutting which is difficult to work single crystals by providing a first and a second monochromatizing crystal for expanding or reducing incident light in the longitude direction and laterally reducing single crystals for laterally reducing incident light from the second monochromatizing crystal. CONSTITUTION:Radiation light 3 is made monochromatizing at the same time an exposure field is enlarged by asymmetrical diffraction by a first monochromatizing crystal 4, and enters a second monochromatizing crystal 5. A mask pattern 6 is written on the second monochromatizing crystal 5. Since asymmetrical diffraction is performed by the second monochromatizing crystal 5, an emission light 7 from the second monochromatizing crystal 5 is reduced in the longitudinal direction. Further, asymmetrically diffracted X-rays are exposed to an exposed substrate 9 applied with a resist film by a lateral reducing single crystal 8. Thus, the mask pattern 6 is reduction-projected on the exposed substrate 9. As a result, asymmetrical cutting which is difficult to work single crystals need not be performed. |
