发明名称 PLATING METHOD AND APPARATUS
摘要 PURPOSE:To form a uniform plating layer and to enhance the yield of production by reducing the pressure of a space on a plating soln. and upwardly separating bubbles generated on the surface of a substrate. CONSTITUTION:The pressure of a space 14 on a plating soln. 4 in a plating vessel 2 is reduced to about 20-100Torr by a vacuum pump 16 and a prescribed voltage is impressed between a wafer 6 as a substrate and an anode plate 8 to electroplate the exposed barrier metal of the wafer 6. During this plating, bubbles of oxygen are generated from the surface of the anode plate 8 and bubbles of hydrogen from the surface of the wafer 6 to be plated on the cathode 10 side. Since the space 14 on the plating soln. 4 is kept under the reduced pressure, the bubbles readily leave the surfaces and rise by the pressure difference. The separation of the bubbles of hydrogen is accelerated by setting an ultrasonic oscillator 20 and applying ultrasonic vibration to the bubbles on the surface of the wafer 6 to be plated.
申请公布号 JPH02217429(A) 申请公布日期 1990.08.30
申请号 JP19890038761 申请日期 1989.02.17
申请人 FUJITSU LTD 发明人 TABATA AKIRA
分类号 C22B5/00;C25D5/00;C25D7/12;C25D21/04;H01L21/60 主分类号 C22B5/00
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