MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE,申请号KR19900004895-传众专利搜索

发明名称	MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要	A method of manufacturing a semiconductor device comprises the steps of performing selective vapor growth (ST1) on a semiconductor substrate (1), and polishing (ST2) a surface of an insulative film (3C) formed on said semiconductor substrate (1) subsequent to the selective vapor growth step (ST1).
申请公布号	KR930007095(B1)	申请公布日期	1993.07.29
申请号	KR19900004895	申请日期	1990.04.10
申请人	TOSHIBA CO., LTD.	发明人	OGINO, MASANOBU
分类号	H01L21/28;H01L21/285;H01L21/768;H01L23/532;H01L29/08;H01L29/417;(IPC1-7):H01L21/285	主分类号	H01L21/28
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