| 发明名称 |
Formation of silicide contacts using a sidewall oxide process |
| 摘要 |
A method for formation of silicide structures on a semiconductor device. Oxide sidewalls are formed upon and selectively removed from polysilicon contacts. Refractory metal is deposited and heated, unreacted metal is removed, leaving a metal silicide on selected polysilicon sidewalls.
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| 申请公布号 |
US5231042(A) |
申请公布日期 |
1993.07.27 |
| 申请号 |
US19920835653 |
申请日期 |
1992.02.13 |
| 申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
ILDEREM, VIDA;SOLHEIM, ALAN G.;JEROME, RICK C |
| 分类号 |
H01L21/285;H01L21/336;H01L21/8249;H01L23/522;H01L27/06 |
主分类号 |
H01L21/285 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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