PROBE DRIVE MECHANISM, ITS PRODUCTION METHOD, TONNEL CURRENT DETECTOR, INFORMATION PROCESSOR, PLEZOELECTRIC ACTUATOR USING SAID MECHANISM AND ITS PRODUCTION METHOD

摘要

PURPOSE:To reduce the parasitic capacity produced between a cantilever and a support body and contrive the improvement of responsibility of the cantilever by leaving an insulation layer between a board and an electrode only under wiring and thereafter laminating an electrode layer and a piezoelectric layer. CONSTITUTION:A silicon oxide film 3 is formed on a Si board 1 and both the faces thereof are patterned so that the silicon oxide film 3 may be left only on a support body part of the surface thereof. A silicon nitride film 2 of 1000-1500Angstrom is formed and patterning is performed only on the rear face thereof. And a film of about 1000Angstrom is formed as a lower electrode 4, then a piezoelectric body 5, an intermediate electrode 6, a piezoelectric body layer 7 and an upper electrode 8 are laminated in this order to constitute a cantilever, and a chip 9 is formed on the free end thereof. Thereby, it is possible to have enough film thickness to reduce a parasitic capacity produced between the electrode of the cantilever and the support body.