| 摘要 |
PURPOSE:To suppress only the dielectric constant to a low value without greatly changing the electromechanical coupling coefficient or suppress the dispersion in crystal grain size of a sintered compact and exhibit excellent performances by adding a specific % of SiO2 to Pb(Sn1/3Sb2/3)ATiBZrCO3. CONSTITUTION:Raw materials metallic oxides [Pb(Sn1/3Sb2/3)O3, PbTiO3 and PbZrO3] are blended so as to provide a composition in which X wt.% (0<=X<=0.20) SiO2 or Al2O3 is added to Pb(Sn1/3Sb2/3)ATiBZrCO3 [(A+B+C) is 1; 0.01<=A<=0.20; 0.40<=B<=0.55; 0.25<=C<=0.59] and wet mixing is carried out. The resultant slurry is dried and then calcined at about 80 deg.C. The calcined substance is subsequently wet pulverized in a ball mill and dried. PVA as a binder is added thereto and the obtained mixture is granulated, subsequently formed and burned at about 1250 deg.C. Both surfaces of the obtained sintered compact are polished and silver electrodes are then baked to perform polishing of the outer periphery. A DC voltage is applied thereto in a silicone oil at 100 deg.C to carry out polarization treatment. |
