| 摘要 |
A field emitter array memory device having two or more collector electrodes, an extraction electrode, at least one deflector electrode, and at least one electron field emitter is disclosed. The field emitter array memory circuit has bias voltages for collector electrodes, for the at least one deflector electrode and for the extraction electrode. In a preferred embodiment of the invention, first and second input signal voltages selectively applied to first and second deflector electrodes selectively switch the flow of electrons emitted from an electron field emitter from a first collector electrode to a second collector electrode and vice versa. A latched memory output is also included. Electron flow from the electron field emitter to one of the first and second collector electrodes is maintained until a signal voltage is applied to a deflector electrode to cause the electron flow to deflect from one collector electrode to the other collector electrode.
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