| 摘要 |
There is provided a method for the production of a silicon carbide single crystal, which includes the steps of: providing a silicon single-crystal substrate having a growth plane with a crystal orientation inclined from the [100] direction toward an off-direction, wherein the crystal orientation is defined by a deviation angle theta of 5 to 40 degrees, as measured from the [011] direction toward the [01 &upbar& 1] direction, and a tilt angle phi of 1 to 7 degrees, as measured from the [100] direction toward the off-direction; and growing a silicon carbide single crystal on the substrate.
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