SEMICONDUCTOR DEVICE INCLUDING AN OBLIQUE SURFACE AND AN ELECTRODE CROSSING THE OBLIQUE SURFACE

摘要

A semiconductor device is made by etching a III-V compound semiconductor layer having a (100) surface using a mask having an opening defined by edges including at least one edge along an [0 &upbar& 11] direction of the layer so that the surface revealed by etching has a (111) orientation. An electrode is formed on the (111) surface by vacuum vapor deposition.