| 摘要 |
A semiconductor device is provided with an isolation region for isolating the semiconductor device from an adjacent semiconductor device provided commonly on a semiconductor substrate. The isolation region includes a groove extending to a predetermined depth of the substrate, a non-doped silicon oxide layer provided on a whole inner surface of the groove, and a BPSG (boro-phosho-silicate glass) layer filled in a remaining portion of the groove covered with the non-doped silicon oxide layer on the inner surface. An interconnection layer is provided on the isolating region selectively.
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