| 摘要 |
<p>PURPOSE:To provide a method of treating the surface of an Si-doped semiconductor epitaxial growth substrate, which is capable of etching away selectively an Si crystal deposited on the surface of an epitaxial layer. CONSTITUTION:An Si-doped semiconductor epitaxial growth substrate is dipped in a strong alkali solution and an Si crystal deposited on the surface of an epitaxial layer is etched away. The Si crystal deposited in a mountain range form on the surface of the epitaxial layer can be selectively etched away. Accordingly, the use of a high-cost apparatus can be dispensed with. Moreover, as the Si crystal is not shaved off mechanically from the surface of the epitaxial layer, the surface of the epitaxial layer is never marred, the cause of a failure of cracking a wafer can be eliminated and the yield in the production of the wafer is improved.</p> |
