FINE PROCESSING OF SEMICONDUCTOR

摘要

PURPOSE:To provide a method of fine processing of a semiconductor for use in varieties of semiconductor devices wherein it is excellent in etching rate controllability and flatness of an etched surface. CONSTITUTION:There is ensured surface orientation selective etching with a reduced etching rate and with excellent controllability by alternately and repeatedly dipping a semiconductor specimen in an oxidizing agent such as hydrogen peroxide and a dissolving agent such as sulfuric acid. There is achieved semiconductor fine processing with excellent in the flatness of an etched surface keeping a mesa configuration by polishing the etched surface contaminated with a uniform etching solution of a reduced etching rate containing a large quantity of a buffering agent such as water after subjecting the semiconductor specimen to the surface orientation selective etching.