| 摘要 |
PURPOSE:To increase access speed by decreasing resistance of source voltage line in SRAM which has high resistive load four transistor cells wherein the source voltage and the load resistor are composed of polysilicon thin film. CONSTITUTION:A polysilicon thin film 3 is patterned on an insulating film 2 formed on a semiconductor silicon substrate 1. Then, boron ions 11 are injected with low concentration on the whole surface of the polysilicon thin film 3. Afterwards masking is applied to only high resistance section 3b of the polysilicon thin film 3 to become negative resistance, and arsenic ions are injected with high concentration on other section. In this way, low resistance section 3a is formed to become source voltage line and contact section. Subsequently, a metallic silicide film 5 is formed on only the low resistance section 3a of the polysilicon thin film 3. Then, the polysilicon thin film 3 and the metallic silicide film 5 of the low resistance section are alloyed by heat treatment. |
