| 摘要 |
PURPOSE:To prevent formation of a very small hole on an electrode in a contact hole by the dislocation between a charge storage electrode and a contact as well as the side etch of the charge storage electrode, in a stacked capacitor-type DRAM. CONSTITUTION:Side walls of a contact hole for connecting a charge storage electrode 9 and a source region 5 of a transistor are covered with a protection film 8 having small etch rate to etching of an insulating film 6 and the electrode 9, unlike the interlayer insulating film 6 on a gate electrode. Therefore, very small holes are difficult to be formed in the contact hole, despite of the dislocation between the charge storage electrode 9 and the contact, and the side etch of the storage electrode. In addition, the interlayer insulating film is not etched in the case of FIM structure. As a result, the margin of the electrode and the contact can be reduced, and the size of a memory cell also can be made smaller. |
