发明名称 CIRCUIT AND METHOD FOR PROGRAMMING AND ERASING NONVOLATILE SEMICONDUCTOR MEMORY
摘要 <p>PURPOSE: To minimize the code quantity of a microprocessor by providing a device storing an instruction for starting a multistage program sequence for a semiconductor memory to eliminate the need to control from an external device, once the sequence is started. CONSTITUTION: The nonvolatile semiconductor memory 20 includes a writing state circuit 32, and the multi-stage sequence executes the sequence of the memory 20, so that the circuit 32 may program or erases the contents of the memory only with a starting instruction from the microprocessor 999. Then a specific data pattern is written in the circuit 32 through a data input/output line 26. Consequently, once the program or the erasing sequence is started, the circuit 32 controls the programming and erasing and a state register 34 informs the processor 999 of the completion of the programing and erasing operation when it is completed. Thereby, once the sequence is started, the need for the control fro the external device is eliminated to minimize the code quantity of the microprocessor.</p>
申请公布号 JPH05182475(A) 申请公布日期 1993.07.23
申请号 JP19920056627 申请日期 1992.02.10
申请人 INTEL CORP 发明人 BUAJIRU NAIRUZU KINETSUTO;MITSUKII RII FUANDORITSUCHI
分类号 G11C17/00;G06F12/00;G11C16/02;G11C16/10;G11C16/34 主分类号 G11C17/00
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