| 摘要 |
The method for growing an oxide film of the CMOS integrated device is characterized by implanting O2 gas into the silicon wafer at 700-1200 deg.C and 1 l/min velocity, implanting O2 gas at 1200 deg.C and 1 l/min velocity, heat-treating it for 5 hr to form a no-flaw region, implanting O2 gas and tetrachloroethene (TCA) at 1200 deg.C, 7.5 l/min (O2 gas) and 215 cc/min (TCA), and heat-treating it for 70 min to form the oxide film.
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