| 摘要 |
<p>PURPOSE:To provide a pad structure for a semiconductor device and others capable of improving the mechanical strength of the pad even when the pad is formed on an organic insulating film having a mechanical strength weak enough to make it easy to contact the lead to the pad. CONSTITUTION:A pad structure for a semiconductor substrate and others is to electrically contact the pad 26 for use of connecting the lead on the multilayer organic insulating film (polyimide layer containing silicon) 28 which is formed on a nitride film 20 and a wiring metal layer. On each of the multilayer organic insulating film, the multilayer wiring metal is arranged locationally corresponding to the pad bases 24a to 24d and the wiring metal on the nitride film 20. The pad 26, the multilayer wiring metal, the wiring metal on the nitride film 20 are electrically connected via the through holes 30a to 30c which are formed on each of multilayer organic insulating film 28.</p> |
