| 摘要 |
PURPOSE:To provide a multichip-type semiconductor device of simple structure which can be manufactured through a smaller number of production processes than the number of conventional processes. CONSTITUTION:The part 21a of an outer lead 21 mounting a power transistor chip 22a is exposed from a semiconductor device 20. When a bump 23 is formed on the bottom face of a control IC chip 22b and directly connected with the outer lead 21, the control IC chip 22b and outer lead 21 are connected electrically. Thus, it is possible to simplify the structure of the semiconductor device, especially the heat-dissipating structure thereof, because heat generated in the power transistor chip is dissipated to the outside via the outer lead. Also, because the control IC chip and outer lead are electrically connected via the bump, a wire bond process for connecting the control IC chip and outer lead becomes useless so that the title multichip-type semiconductor device can be manufactured through a smaller number of production processes than the number of conventional processes. |
