| 摘要 |
<p>PURPOSE:To improve the structure and production of a thin film transistor so that disconnection is suppressed, to make an amorphous Si:H film thin and to reduce photoelectric current. CONSTITUTION:Scanning lines and a gate electrode 2 are formed on a glass substrate 1 and a gate insulating film 3 is formed. An ITO film for a transparent electrode is then deposited and patterned and an electric conductive film and an n-type Si film are deposited and patterned into a source-drain electrode 6 and signal lines, respectively. An amorphous Si:H film 4 is further deposited and the part of the film 4 for forming a thin film transistor is insularly worked. A passivation film is finally formed all over the surface and the objective liq. crystal display device is produced.</p> |
